Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films.
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Physical Properties of Sapphire |
Crystal Structure |
Hexagonal. a =4.758 ? c= 12.992 ? |
Crystallographic D spacing |
(1120 ) - a plane: 2.379 ? (1102) - r plane: 1.740 ? (1010) - m plane: 1.375 ? (1123) - n plane: 1.147 ?ˉ (0001) - c plane: 2.165 ? (1011) - s plane: 1.961 ? |
Crystal Purity |
> 99.99% |
Melt Point |
2040 oC |
Density |
3.98 g/cm3 |
Hardness |
9 ( mohs) |
Thermal Expansion |
7.5 (x10-6/ oC) |
Specific Heat |
0.10 ( cal / oC) |
Thermal Conductivity, |
46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) |
Dielectric Constant |
~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis |
Loss Tangent at 10 GHz |
< 2x10-5 at A axis , <5 x10-5 at C axis |
Standard Products |
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As - grown boules ori.± 0.5o |
3" dia x 50 ~ 70 mm length 2" dia x 50 ~ 70 mm length 30 mm dia x 150 mm length |
As-cut blanks ori.± 0.5o |
2" dia x 0.7 mm thickness 1" dia x 0.7 mm thickness |
Epi -polished substrates C, R, A plane: ori.± 0.5o 1 or 2 sides polished Ra< 10 ? |
3" dia. x 0.5 mm 2" dia. x 0.33 mm, 2"dia x 0.5 mm 1" dia x 0.5 mm 0.5" x 0.5" x 0.5 mm 10x10x0.5 mm |
Web Map
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Crystal Series
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Instrument Equipment
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